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1000
15
Common Emitter
R L = 25 ?
12
9
T C = 25 ℃
100
Eoff
Eon
300 V
Eon
Eoff
Common Emitter
V CC = 300V, V GE = ± 15V
R G = 23 ?
6
3
V CC = 100 V
200 V
T C = 25 ℃
T C = 125 ℃
10
0
4
8
12
16
20
24
0
10
20
30
40
50
Collector Current, I C [A]
Fig 13. Switching Loss vs. Collector Current
300
Gate Charge, Q g [ nC ]
Fig 14. Gate Charge Characteristics
200
100
I C MAX. (Pulsed)
50us
100
10
I C MAX. (Continuous)
1 ?
100us
10
DC Operation
1
Single Nonrepetitive
Pulse T C = 25 ℃
Curves must be derated
linearly with increase
1
Safe Operating Area
0.1
in temperature
0.3 1
10
100
1000
0.1
1
V GE = 20V, T C = 100 ℃
10 100
1000
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
10
Collector-Emitter Voltage, V CE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.1
0.5
0.2
0.1
0.05
Pdm
0.01
0.02
0.01
single pulse
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm ? Zthjc + T C
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
?2001 Fairchild Semiconductor Corporation
SGF23N60UF Rev. C1
5
www.fairchildsemi.com
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